April 2009

Doc ID 14136 Rev 2

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PD20015C

RF power transistor, LdmoST family

Features

directive

Description

The PD20015C is a common source

N-channel, enhancement-mode lateral field-effect

RF power transistor. It is designed for high gain,

broadband commercial and industrial

applications. It operates at 13.6 V in common

source mode at frequencies of up to 2 GHz.

PD20015C boasts the excellent gain, linearity and

reliability of ST’s latest LDMOS technology.

PD20015C’s superior linearity performance

makes it an ideal solution for mobile application.

Figure 1.

Pin connection

M243

Epoxy sealed

1. Drain

2. Gate

3. Source

1

3

2

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