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PD20015C 数据表(PDF) 4 Page - STMicroelectronics |
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PD20015C 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Electrical characteristics PD20015C 4/9 Doc ID 14136 Rev 2 2 Electrical characteristics TCASE = +25 °C 2.1 Static 2.2 Dynamic 2.3 ESD protection characteristics Table 4. Static Symbol Test conditions Min. Typ. Max. Unit IDSS VGS = 0 V VDS = 25 V - 1 μA IGSS VGS = 5 V VDS = 0 V - 1 μA VGS(Q) VDS = 10 V ID = 350 mA - 4.2 V VDS(ON) VGS = 10 V ID = 1 A - 270 310 mV CISS VGS = 0 V VDS = 12.5 V f = 1 MHz - 49 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz - 35 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz - 1.0 pF Table 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P3dB VDD = 13.6 V, IDQ = 350 mA f = 2 GHz 23 - W GP VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz 10 11 - dB hD VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz 45 53 - % Load mismatch VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz All phase angles 20:1 - VSWR Table 6. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 |
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