Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2007

Rev 1

1/10

10

PD85025C

RF power transistor - LdmoST family

Features

13.6 V

directive

Description

The PD85025C is a common source

N-channel, enhancement-mode lateral Field-

Effect RF power transistor. It is designed for high

gain, broadband commercial and industrial

applications. It operates at 13.6 V in common

source mode at frequencies of up to 1 GHz.

PD85025C boasts the excellent gain, linearity and

reliability of ST’s latest LDMOS technology.

PD85025C’s superior linearity performance

makes it an ideal solution for mobile application.

Figure 1.

Pin connection

M243

Epoxy sealed

1. Drain

2. Gate

3. Source

1

3

2

Table 1.

Device summary

Order code

Package

Packing

PD85025C

M243

Box

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