PD85025C datasheet(4/10 Pages) STMICROELECTRONICS

部件名	PD85025C

功能描述	RF power transistor - LdmoST family

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 10 page

Electrical characteristics

PD85025C

4/10

Electrical characteristics

TCASE = +25

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

Table 4.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

IDSS

VGS = 0 V

VDS = 25 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 10 V

ID = TBD mA

TBD

VDS(ON)

VGS = 10 V

ID = 1 A

270

310

CISS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

1.0

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

P3dB

VDD = 13.6 V, IDQ = 300 mA

f = 945 MHz

VDD = 13.6 V , IDQ = 300 mA, POUT = 10 W, f = 945 MHz

17.5

VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 945 MHz

Load

mismatch

VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 945 MHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

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