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STPS30120C 数据表(PDF) 2 Page - STMicroelectronics |
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STPS30120C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS30120C 2/8 Doc ID 11213 Rev 3 1 Characteristics When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5 Tc = 145 °C Per diode Per device 15 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6700 W VARM (1) 1. Refer to Figure 11 Maximum repetitive peak avalanche voltage tp = 1 µs, Tj < 150 °C, IAR < 13.4 A 150 V VASM (1) Maximum single pulse peak avalanche voltage tp = 1 µs, Tj < 150 °C, IAR < 13.4 A 150 V Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature(2) 2. condition to avoid thermal runaway for a diode on its own heatsink 175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 2.2 1.3 °C/W Rth(c) Coupling Total 0.3 °C/W dPtot dTj < 1 Rth(j-a) |
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