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STPS30120C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS30120C
功能描述  Power Schottky rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS30120C 数据表(HTML) 2 Page - STMicroelectronics

  STPS30120C Datasheet HTML 1Page - STMicroelectronics STPS30120C Datasheet HTML 2Page - STMicroelectronics STPS30120C Datasheet HTML 3Page - STMicroelectronics STPS30120C Datasheet HTML 4Page - STMicroelectronics STPS30120C Datasheet HTML 5Page - STMicroelectronics STPS30120C Datasheet HTML 6Page - STMicroelectronics STPS30120C Datasheet HTML 7Page - STMicroelectronics STPS30120C Datasheet HTML 8Page - STMicroelectronics  
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Characteristics
STPS30120C
2/8
Doc ID 11213 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
120
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward
current
δ = 0.5
Tc = 145 °C
Per diode
Per device
15
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
6700
W
VARM
(1)
1.
Refer to Figure 11
Maximum repetitive
peak avalanche voltage
tp = 1 µs, Tj < 150 °C, IAR < 13.4 A
150
V
VASM
(1)
Maximum single pulse
peak avalanche voltage
tp = 1 µs, Tj < 150 °C, IAR < 13.4 A
150
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
2.2
1.3
°C/W
Rth(c)
Coupling
Total
0.3
°C/W
dPtot
dTj
<
1
Rth(j-a)



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