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STPS30120C 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS30120C
功能描述  Power Schottky rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS30120C 数据表(HTML) 3 Page - STMicroelectronics

  STPS30120C Datasheet HTML 1Page - STMicroelectronics STPS30120C Datasheet HTML 2Page - STMicroelectronics STPS30120C Datasheet HTML 3Page - STMicroelectronics STPS30120C Datasheet HTML 4Page - STMicroelectronics STPS30120C Datasheet HTML 5Page - STMicroelectronics STPS30120C Datasheet HTML 6Page - STMicroelectronics STPS30120C Datasheet HTML 7Page - STMicroelectronics STPS30120C Datasheet HTML 8Page - STMicroelectronics  
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STPS30120C
Characteristics
Doc ID 11213 Rev 3
3/8
Table 4.
Static electrical characteristics (per diode)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test : tp = 5 ms,
δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
15
µA
Tj = 125 °C
2.5
7.5
mA
VF
(2)
2.
Pulse test : tp = 380
μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.59 x IF(AV) + 0.01 IF
2
(RMS)
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.74
V
Tj = 125 °C
0.57
0.61
Tj = 25 °C
IF = 15 A
0.92
Tj = 125 °C
0.7
0.74
Tj = 25 °C
IF = 30 A
1.02
Tj = 125 °C
0.83
0.89
Figure 2.
Average forward power
dissipation versus average forward
current (per diode)
Figure 3.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
2
4
6
8
10
12
14
16
18
P
(W)
F(AV)
T
δ=tp/T
tp
δ = 1
δ = 0.05
I
(A)
F(AV)
δ = 0.5
δ = 0.2
δ = 0.1
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
δ=tp/T
tp
T
(°C)
amb
R
=15°C/W
th(j-a)
R=R
th(j-a)
th(j-c)
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
P(tp)
P
(1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
P(T )
P
(25 °C)
ARM
j
ARM
T (°C)
j



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