DMN3010LSS

Document number: DS31259 Rev. 6 - 2

2 of 5

www.diodes.com

November 2008

© Diodes Incorporated

DMN3010LSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.1

⎯

2.0

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

9

13

m

Ω

Forward Transconductance

⎯

16

⎯

S

Diode Forward Voltage (Note 5)

0.5

⎯

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

2096

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

329

⎯

pF

Reverse Transfer Capacitance

⎯

258

⎯

pF

Gate Resistance

⎯

1.2

⎯

Ω

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

22.4

43.7

⎯

nC

Gate-Source Charge

⎯

5.5

⎯

Gate-Drain Charge

⎯

12.6

⎯

Turn-On Delay Time

⎯

7.11

⎯

ns

Rise Time

⎯

10.3

⎯

Turn-Off Delay Time

⎯

58.3

⎯

Fall Time

⎯

32.1

⎯

Notes:

5. Short duration pulse test used to minimize self-heating effect.

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 1.5V

GS

V

= 3.0V

GS

0

2

4

6

8

10

12

14

16

18

20

0

0.1 0.2 0.3 0.4

0.5 0.6 0.7 0.8 0.9

1

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 2 Source Current vs. Source-Drain Voltage

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A