DMN3010LSS

Document number: DS31259 Rev. 6 - 2

3 of 5

www.diodes.com

November 2008

© Diodes Incorporated

DMN3010LSS

Fig. 3 Drain-Source On-Resistance vs. Drain Current

6

8

10

12

14

16

18

20

02

4

6

8

10

12

14

16

18

20

I , DRAIN CURRENT (A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 4 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 16A

GS

D

Fig. 5 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

10,000

0

5

10

15

20

25

30

C

iss

C

oss

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A

-50

-25

0

25

50

75

100

125 150

1

1.3

1.6

1.9

2.2

2.5

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

1

10

100

0

0.1 0.2

0.3 0.4 0.5

0.6 0.7 0.8 0.9

1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A