MRF8S9102NR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 865 to

960 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

920 MHz

23.1

36.4

6.3

--35.5

940 MHz

23.1

36.4

6.2

--36.1

960 MHz

22.8

36.6

6.1

--35.8

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW

Enhanced Ruggedness

≃ 100 Watts CW

880 MHz

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

865 MHz

22.9

35.4

6.4

--34.7

880 MHz

23.0

35.5

6.2

--35.1

895 MHz

22.8

35.6

6.0

--35.7

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Document Number: MRF8S9102N

Rev. 0, 2/2011

Freescale Semiconductor

Technical Data

865--960 MHz, 28 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

MRF8S9102NR3

CASE 2021--03, STYLE 1

OM--780--2

PLASTIC

© Freescale Semiconductor, Inc., 2011. All rights reserved.