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ZXGD3003E6 数据表(PDF) 1 Page - Diodes Incorporated |
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ZXGD3003E6 数据表(HTML) 1 Page - Diodes Incorporated |
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1 / 8 page ![]() Issue 2 - October 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXGD3003E6 5A(peak) gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3003E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates. Features • 40V operating voltage range • 5 amps peak output current • Fast switching emitter-follower configuration • 2ns propagation delay time • 19ns rise/fall time, 1000pF load • Low input current requirement • 1.6A(source)/1.4A(sink) output current from 10mA input • SOT23-6 package • Separate source and sink outputs for independent control of rise and fall time • Optimized pin-out to ease board layout and minimize trace inductance • No Latch Up • No shoot through • Near - Zero quiescent and output leakage current Typical application circuit GND SINK VCC IN1 IN2 SOURCE VS Input VCC ZXGD3003 |
类似零件编号 - ZXGD3003E6 |
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类似说明 - ZXGD3003E6 |
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