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ZXGD3003E6 数据表(PDF) 3 Page - Diodes Incorporated |
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ZXGD3003E6 数据表(HTML) 3 Page - Diodes Incorporated |
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3 / 8 page ![]() ZXGD3003E6 Issue 2 - October 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings Thermal resistance NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For device with two active dice running at equal power. (c) Pulse width <=300us limit repetition rate to comply with maximum junction temperature. Parameter Symbol Limit Unit Supply voltage VCC 40 V Input voltage VIN 40 V Peak sink current(c) I(sink)PK 5A Source current @ IIN1 + IIN2 =10mA(a) I(source) 1.6 A Sink current @ IIN1 + IIN2 =10mA(a) I(sink) 1.4 A Input current(c) IIN1, IIN2 1A Power dissipation at TA =25°C(a)(b) PD 1.1 W Linear derating factor 8.8 mW/ °C Operating and storage temperature range Tj, Tstg -55 to +150 °C Parameter Symbol Value Unit Junction to ambient(a)(b) R JC 113 °C/W |
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