ZXTC4591AMC datasheet(6/9 Pages) DIODES

6 / 9 page

ZXTC4591AMC

Document number: DS31925 Rev. 2 - 2

6 of 9

www.diodes.com

January 2010

A Product Line of

Diodes Incorporated

ZXTC4591AMC

Electrical Characteristics, PNP Transistor @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-40

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 4)

V(BR)CEO

-40

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = -100µA

Collector Cutoff Current

ICBO

-100

VCB = -30V

Emitter Cutoff Current

IEBO

-100

nA

VEB = -4V

Collector Emitter Cutoff Current

ICES

-100

VCE = -30V

Static Forward Current Transfer Ratio

(Note 4)

hFE

300

250

160

800

IC = -1mA, VCE = -5V

IC = -100mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

Collector-Emitter Saturation Voltage

(Note 4)

VCE(sat)

-200

-350

-500

IC = -0.1A, IB = -1mA

IC = -0.5A, IB = -20mA

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage(Note 4)

VBE(on)

-1.0

IC = -1A, VCE = -5V

Base-Emitter Saturation Voltage(Note 4)

VBE(sat)

-1.1

IC = -1A, IB = -50mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

150

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Notes:

4. Measured under pulsed conditions.

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