ZXTC4591AMC datasheet(4/9 Pages) DIODES

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ZXTC4591AMC

Document number: DS31925 Rev. 2 - 2

4 of 9

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January 2010

A Product Line of

Diodes Incorporated

ZXTC4591AMC

Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 3)

V(BR)CEO

IC = 10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 100µA

Collector Cutoff Current

ICBO

100

VCB = 30V

Emitter Cutoff Current

IEBO

100

nA

VEB = 4V

Collector Emitter Cutoff Current

ICES

100

VCE = 30V

Static Forward Current Transfer Ratio

(Note 3)

hFE

300

200

900

IC = 1mA, VCE = 5V

IC = 500mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 2A, VCE = 5V

Collector-Emitter Saturation Voltage

(Note 3)

VCE(sat)

300

500

IC = 0.5A, IB = 50mA

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 3)

VBE(on)

1.0

IC = 1A, VCE = 5V

Base-Emitter Saturation Voltage (Note 3)

VBE(sat)

1.1

IC = 1A, IB = 100mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

150

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Notes:

3. Measured under pulsed conditions.

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