2SC5000 datasheet(1/3 Pages) TOSHIBA

部件名	2SC5000

功能描述	Power Amplifier Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2SC5000

2004-07-26

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5000

Power Amplifier Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)

Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

80

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

10

A

Base current

IB

1

A

Collector power dissipation

PC

25

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 70 V, IE = 0

―

1

µA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

1

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

50

―

V

DC current gain

hFE (1)

VCE = 1 V, IC = 1 A

120

―

400

Collector-emitter

VCE (sat)

IC = 5 A, IB = 0.25 A

―

0.19

0.4

Saturation voltage

Base-emitter

VBE (sat)

IC = 5 A, IB = 0.25 A

―

0.96

1.4

V

Transition frequency

fT

VCE = 1 V, IC = 1 A

―

90

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

90

―

pF

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

C5000

Part No. (or abbreviation code)

类似零件编号 - 2SC5000

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC5000	140Kb / 3P	NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)

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