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2SC5000 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SC5000 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() 2SC5000 2004-07-26 2 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC Common emitter Tc = 25°C IB = 10 mA 20 30 40 50 60 70 80 10 0 0 2 4 6 8 10 2 4 6 8 100 25 Tc = −25°C 20 0 0 Common emitter VCE = 1 V 0.4 0.8 1.2 1.6 2.0 4 8 12 16 −25 25 Tc = 100°C 1000 1 0.01 Common emitter VCE = 1 V 0.1 1 10 30 3 5 10 30 50 100 300 500 −25 25 Tc = 100°C 10 0.01 0.01 Common emitter IC/IB = 20 0.1 1 10 30 0.03 0.05 0.1 0.3 0.5 1 3 5 Collector-emitter voltage VCE (V) Safe Operating Area VCEO max 100 ms* 100 µs* 1 ms* 10 ms* IC max (pulsed)* IC max (continuous) * DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 30 0.1 1 3 5 10 30 100 1 3 5 10 50 0.3 0.5 5 0.01 0.01 0.1 1 10 30 0.03 0.05 0.1 0.3 0.5 1 3 Common emitter IC/IB = 20 10 −25 25 Tc = 100°C |
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