Document Number: 89350

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Revision: 30-Nov-10

1

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VT3045C, VIT3045C

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 15 A

45 V

200 A

0.39 V

150 °C

PIN 1

PIN 2

PIN 3

K

VIT3045C

TO-220AB

VT3045C

1

2

3

PIN 1

PIN 2

CASE

PIN 3

TMBS

®

1

K

2

3

TO-262AA

PARAMETER

SYMBOL

VT3045C

VIT3045C

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current (fig. 1)

per device

30

A

per diode

15

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

200

A

Operating junction and storage temperature range

- 40 to + 150

°C