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VT3045C 数据表(PDF) 3 Page - Vishay Siliconix |
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VT3045C 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() Document Number: 89350 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 30-Nov-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 VT3045C, VIT3045C Vishay General Semiconductor New Product Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Instantaneous Forward Voltage (V) 0 0.2 0.4 0.7 100 10 1 0.1 T A = 150 °C T A = 125 °C T A = 100 °C T A = 25 °C 0.6 0.1 0.3 0.5 20 40 60 80 100 1 0.1 0.01 0.001 100 10 Percent of Rated Peak Reverse Voltage (%) T A = 150 °C T A = 25 °C T A = 100 °C T A = 125 °C 100 10 000 100 000 0.1 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 1000 10 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Junction to Case 1 |
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