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Revision 1.12

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AS5050

Datasheet - Electrical Character i s t ics

6 Electrical Characteristics

6.1 Operating Conditions

6.2 System Parameters

6.3 DC/AC Characteristics

Digital pads: MISO, MOSI, SCK, SS/, EN_INT/, INT/, Wire_mode

Table 3. Operating Conditions

Parameter

Conditions

Min

Typ

Max

Units

DC supply voltage

VDD

3.0

3.6

V

Peripheral supply voltage

1

1. VDDp must not exceed VDD (protection diode between VDDp and VDD)

VDDp

1.8

VDD

V

Input pin voltage

-0.3

VDDp +0.3

V

Ambient operating temperature

-40

80

°C

External component

Power supply filter, pin VDD

(refer to Power Supply Filter on page 6)

2.2

4.7

µF

15

33

Ω

Ceramic capacitor, pin VDDp to VSS

100

nF

Table 4. System Parameters

Symbol

Parameter

Conditions

Min

Typ

Max

Units

I_10

Operating current

Average current @ 10 ms readout rate

1

1. Without the time for the SPI interface

0.5

mA

I_100

Operating current

Average current @ 100 ms readout rate

53

µA

I_max

Operating current

Maximum readout rate

8.5

mA

Readout rate

Time between READ ANGLE command and

INTERRUPT

320

430

µs

Power down current

Power down current

3

µA

Rd

Lateral displacement range

Centre of the magnet to the centre of the die

-

± 0.5

mm

Magnetic field strength

30

-

80

mT

Serial interface

SPI mode 0 (CPOL = 0 / CPHA =0)

Resolution; angle

10

bit

INL

Best-fit line - over supply, displacement and

temperature – but without quantization

-1.41

1.41

degree

IC package

QFN 4x4x0.85

Table 5. DC/AC Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

High level input voltage

0.7 * VDDp

V

Low level input voltage

VDDp > 2.7V

0.3 * VDDp

V

Low level input voltage

VDDp < 2.7V

0.25 * VDDp

V

Input leakage current

1

µA

High level output voltage

VDDp - 0.5

V

Low level output voltage

VSS + 0.4

V

Capacitive load

35

pF