| 数据搜索系统,热门电子元器件搜索 |
|
SST25VF080B 数据表(PDF) 9 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
SST25VF080B 数据表(HTML) 9 Page - Microchip Technology |
|
9 / 36 page ![]() ©2011 Silicon Storage Technology, Inc. S71296-05-000 02/11 9 8 Mbit SPI Serial Flash SST25VF080B Data Sheet A Microchip Technology Company Instructions Instructions are used to read, write (Erase and Program), and configure the SST25VF080B. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to execut- ing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write- Status-Register, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list of instructions is provided in Table 5. All instructions are synchronized off a high to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most signif- icant bit. CE# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instruc- tions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first. Table 5: Device Operation Instructions Instruction Description Op Code Cycle1 1. One bus cycle is eight clock periods. Address Cycle(s)2 2. Address bits above the most significant bit of each density can be VIL or VIH. Dummy Cycle(s) Data Cycle(s) Read Read Memory 0000 0011b (03H) 3 0 1 to ∞ High-Speed Read Read Memory at higher speed 0000 1011b (0BH) 3 1 1 to ∞ 4 KByte Sector-Erase3 3. 4KByte Sector Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH. Erase 4 KByte of memory array 0010 0000b (20H) 3 0 0 32 KByte Block-Erase4 4. 32KByte Block Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH. Erase 32 KByte block of memory array 0101 0010b (52H) 3 0 0 64 KByte Block-Erase5 5. 64KByte Block Erase addresses: use AMS-A16, remaining addresses are don’t care but must be set either at VIL or VIH. Erase 64 KByte block of memory array 1101 1000b (D8H) 3 0 0 Chip-Erase Erase Full Memory Array 0110 0000b (60H) or 1100 0111b (C7H) 00 0 Byte-Program To Program One Data Byte 0000 0010b (02H) 3 0 1 AAI-Word-Program6 Auto Address Increment Programming 1010 1101b (ADH) 3 0 2 to ∞ RDSR7 Read-Status-Register 0000 0101b (05H) 0 0 1 to ∞ EWSR Enable-Write-Status-Register 0101b 0000b (50H) 0 0 0 WRSR Write-Status-Register 0000 0001b (01H) 0 0 1 WREN Write-Enable 0000 0110b (06H) 0 0 0 WRDI Write-Disable 0000 0100b (04H) 0 0 0 RDID8 Read-ID 1001 0000b (90H) or 1010 1011b (ABH) 30 1 to ∞ JEDEC-ID JEDEC ID read 1001 1111b (9FH) 0 0 3 to ∞ EBSY Enable SO to output RY/BY# status during AAI programming 0111 0000b (70H) 0 0 0 DBSY Disable SO as RY/BY# status during AAI programming 1000 0000b (80H) 0 0 0 T5.0 1296 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |