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SST25VF080B 数据表(PDF) 17 Page - Microchip Technology |
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SST25VF080B 数据表(HTML) 17 Page - Microchip Technology |
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17 / 36 page ![]() ©2011 Silicon Storage Technology, Inc. S71296-05-000 02/11 17 8 Mbit SPI Serial Flash SST25VF080B Data Sheet A Microchip Technology Company 32-KByte and 64-KByte Block-Erase The 32-KByte Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block- Erase instruction applied to a protected memory area will be ignored. The 64-KByte Block-Erase instruc- tion clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected mem- ory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The 32-KByte Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A23-A0]. Address bits [AMS-A15](AMS = Most Significant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The 64-KByte Block- Erase instruction is initiated by executing an 8-bit command D8H, followed by address bits [A23-A0]. Address bits [AMS-A15] are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed 32-KByte Block-Erase or 64-KByte Block-Erase cycles. See Figures 13 and 14 for the 32-KByte Block-Erase and 64-KByte Block-Erase sequences. Figure 13:32-KByte Block-Erase Sequence Figure 14:64-KByte Block-Erase Sequence CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR 52 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1296 32KBklEr.0 MSB MSB CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR D8 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1296 63KBlkEr.0 MSB MSB |
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