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SST25VF032B 数据表(PDF) 9 Page - Microchip Technology

部件名 SST25VF032B
功能描述  32 Mbit SPI Serial Flash
PDF  31 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

SST25VF032B 数据表(HTML) 9 Page - Microchip Technology

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©2011 Silicon Storage Technology, Inc.
S71327-04-000
02/11
9
32 Mbit SPI Serial Flash
SST25VF032B
Data Sheet
A Microchip Technology Company
Instructions
Instructions are used to read, write (Erase and Program), and configure the SST25VF032B. The
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The Write-
Enable (WREN) instruction must be executed prior any Byte-Program, Auto Address Increment (AAI)
programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions. The com-
plete list of instructions is provided in Table 5.
All instructions are synchronized off a high to low transition of CE#. Inputs will be accepted on the ris-
ing edge of SCK starting with the most significant bit. CE# must be driven low before an instruction is
entered and must be driven high after the last bit of the instruction has been shifted in (except for
Read, Read-ID, and Read-Status-Register instructions). Any low to high transition on CE#, before
receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the
device to standby mode. Instruction commands (Op Code), addresses, and data are all input from the
most significant bit (MSB) first.
Table 5: Device Operation Instructions (1 of 2)
Instruction
Description
Op Code Cycle1
Address
Cycle(s)2
Dummy
Cycle(s)
Data
Cycle(s)
Maximum
Frequency
Read
Read Memory
0000 0011b (03H)
3
0
1 to
25 MHz
High-Speed Read
Read Memory at
higher speed
0000 1011b (0BH)
3
1
1 to
80 MHz
4 KByte Sector-Erase3 Erase 4 KByte of
memory array
0010 0000b (20H)
3
0
0
80 MHz
32 KByte Block-Erase4 Erase 32KByte block
of memory array
0101 0010b (52H)
3
0
0
80 MHz
64 KByte Block-Erase5 Erase 64 KByte block
of memory array
1101 1000b (D8H)
3
0
0
80 MHz
Chip-Erase
Erase Full Memory
Array
0110 0000b (60H)
or
1100 0111b (C7H)
0
0
0
80 MHz
Byte-Program
To Program One
Data Byte
0000 0010b (02H)
3
0
1
80 MHz
AAI-Word-Program6
Auto Address Incre-
ment Programming
1010 1101b (ADH)
3
0
2 to
80 MHz
RDSR7
Read-Status-Regis-
ter
0000 0101b (05H)
0
0
1 to
80 MHz
EWSR
Enable-Write-Status-
Register
0101 0000b (50H)
0
0
0
80 MHz
WRSR
Write-Status-Regis-
ter
0000 0001b (01H)
0
0
1
80 MHz
WREN
Write-Enable
0000 0110b (06H)
0
0
0
80 MHz
WRDI
Write-Disable
0000 0100b (04H)
0
0
0
80 MHz
RDID8
Read-ID
1001 0000b (90H)
or
1010 1011b (ABH)
30
1 to
80 MHz
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to
80 MHz



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