A Microchip Technology Company

©2011 Silicon Storage Technology, Inc.

S71327-04-000

02/11

Data Sheet

www.microchip.com

www.sst.com

Features:

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

– Upto80MHz

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

• Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Word Programming

– Decrease total chip programming time over Byte-Pro-

gram operations

• End-of-Write Detection

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin

• Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

– Enables/Disables the Lock-Down function of the status

register

• Software Write Protection

– Write protection through Block-Protection bits in status

register

• Temperature Range

– Industrial: -40°C to +85°C

• Packages Available

– 8-lead SOIC (200 mils)

– 8-contact WSON (5X6mm)

• All devices are RoHS compliant

32 Mbit SPI Serial Flash

SST25VF032B

SST's 25 series Serial Flash family features a four-wire, SPI-compatible inter-

face that allows for a low pin-count package which occupies less board space

and ultimately lowers total system costs. The SST25VF032B devices are

enhanced with improved operating frequency which lowers power consumption.

SST25VF032B SPI serial flash memories are manufactured with SST's proprie-

tary, high-performance CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and manufacturability

compared with alternate approaches.