IXFN102N30P datasheet(1/5 Pages) IXYS

部件名	IXFN102N30P

功能描述	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

300

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

300

V

GS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C86

A

I

L

Lead Current Limit, RMS

100

A

I

DM

T

C = 25°C, pulse width limited by TJM

250

A

I

AR

T

C = 25°C88

A

E

AR

T

C = 25°C60

mJ

E

AS

T

C = 25°C5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 4 Ω

P

D

T

C = 25°C

570

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5 / 13 Nm/lb.in.

Terminal connection torque

1.5 / 13 Nm/lb.in.

Weight

30

g

DS99248E(06/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

300

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.5

5.0

V

I

GSS

V

GS = ± 20 VDC, VDS = 0

± 200

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

33

m

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN 102N30P

V

DSS

= 300

V

I

D25

=

86

A

R

DS(on) ≤

≤≤≤≤

33 m

Ω

t

rr

≤≤≤≤≤ 200 ns

PolarHVTM HiPerFET

Power MOSFET

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

International standard package

Encapsulating epoxy meets

UL 94 V-0, flammability classification

miniBLOC with Aluminium nitride

isolation

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

类似零件编号 - IXFN102N30P

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN100N10	295Kb / 8P	HIPERFET Power MOSFTETs
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类似说明 - IXFN102N30P

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFC30N60P	141Kb / 4P	PolarHV HiPerFET Power MOSFET
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More results

IXFN102N30P 数据表(PDF) 1 Page - IXYS Corporation

IXFN102N30P 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN102N30P

类似说明 - IXFN102N30P

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IXFN102N30P 数据表(PDF) 1 Page - IXYS Corporation

IXFN102N30P 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN102N30P

类似说明 - IXFN102N30P

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1 2 3 4 5

数据表 下载

链接网址

数据表下载