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IXFN102N30P 数据表(PDF) 4 Page - IXYS Corporation |
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IXFN102N30P 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXFN102N30P Fig. 11. Capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 V DS - V olts C iss C oss C rss f = 1MH z Fig. 10. Gate Char ge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 QG - nanoCoulombs V DS = 150V I D = 51A I G = 10m A Fig. 7. Input Adm ittance 0 25 50 75 100 125 150 3.5 4 4.5 5 5.5 6 6.5 7 7.5 V GS - V olts T J = 125ºC 25ºC -40ºC Fig. 8. Tr ans conductance 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 200 ID - A mperes T J = -40ºC 25ºC 125ºC Fig. 9. Sour ce Cur r e nt vs . Sour ce -To-Dr ain V oltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 V SD - V olts T J = 125ºC T J = 25ºC Fig . 12. Fo r w ar d -Bias Safe Op er atin g Ar ea 1 10 100 1000 10 100 1000 V DS - V olts 100µs 1m s DC T J = 150ºC T C = 25ºC R DS (on) Lim it 10m s 25µs |
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