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SX02ES 数据表(PDF) 1 Page - Littelfuse

部件名 SX02ES
功能描述  New 1.5 Amp sensitive gate SCR series offers high static dv/dt with low
PDF  8 Pages
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制造商  LITTELFUSE [Littelfuse]
网页  http://www.littelfuse.com
标志 LITTELFUSE - Littelfuse

SX02ES 数据表(HTML) 1 Page - Littelfuse

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201
Revised:December22,201009:54AM
©2011 Littelfuse, Inc
Teccor® brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
EV Series 1.5 Amp Sensitive SCRs
Sx02xS Series
A
K
G
Sx02xS Series
Description
Applications
Main Features
Features
New 1.5 Amp sensitive gate SCR series offers high static
dv/dt with low turn off time (tq) through small die planar
construction design. All SCR’s junctions are glass-
passivated to ensure long term reliability and parametric
stability.
The Sx02xS EV series is specifically designed for Gas
Ignition applications that require high pulse surge current
capability.
Symbol
Value
Unit
I
T(RMS)
1.5
A
V
DRM /VRRM
400 to 600
V
I
GT
200
μA
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(full sine wave)
TO-92
T
C = 65°C
1.5
A
SOT-223
T
L = 95°C
I
T(AV)
Average on-state current
TO-92
T
C = 65°C
0.95
A
SOT-223
T
C = 95°C
I
TSM
Non repetitive surge peak on-state current
(Single cycle, T
J initial = 25°C)
TO-92
SOT-223
F = 50 Hz
12.5
A
F = 60 Hz
15.0
I2tI2t Value for fusing
t
p = 10 ms
F = 50 Hz
0.78
A2s
t
p = 8.3 ms
F = 60 Hz
0.93
di/dt
Critical rate of rise of on-state current IG = 10mA
TO-92
SOT-223
T
J = 125°C
50
A/μs
I
GM
Peak gate current
t
p = 10 μs
T
J = 125°C
1.0
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.1
W
T
stg
Storage junction temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Schematic Symbol
Halogen-Free
mount packages
capability > 15Amps
(V
DRM / VRRM )
capability — up to 600V
time (tq) < 35 μsec.
microprocessor interface
HF


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