IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN64N50PD2

IXFN64N50PD3

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

FRED Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

F25

T

30

A

V

F

I

Note 1

2.5

2.75

V

T

1.8

V

I

RM

I

T

5.5

11.5

A

t

rr

V

200

ns

R

thJC

0.9

°C/W

R

thCS

with Heat Transfer Paste

0.25

°C/W

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

50

S

C

iss

9700

pF

C

oss

V

970

pF

C

rss

30

pF

t

d(on)

30

ns

t

r

25

ns

t

d(off)

85

ns

t

f

22

ns

Q

g(on)

150

nC

Q

gs

V

50

nC

Q

gd

50

nC

R

thJC

0.20

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

64

A

I

SM

Repetitive, Pulse Width Limited by T

JM

250

A

V

SD

I

1.5

V

t

rr

200 ns

Q

RM

0.6

μC

I

RM

6.0

A

I

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R