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IXFN64N50PD2 数据表(PDF) 5 Page - IXYS Corporation

部件名 IXFN64N50PD2
功能描述  PolarHV HiPerFET Power MOSFET
PDF  5 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXFN64N50PD2 数据表(HTML) 5 Page - IXYS Corporation

  IXFN64N50PD2 Datasheet HTML 1Page - IXYS Corporation IXFN64N50PD2 Datasheet HTML 2Page - IXYS Corporation IXFN64N50PD2 Datasheet HTML 3Page - IXYS Corporation IXFN64N50PD2 Datasheet HTML 4Page - IXYS Corporation IXFN64N50PD2 Datasheet HTML 5Page - IXYS Corporation  
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© 2009 IXYS CORPORATION, All Rights Reserved
IXFN64N50PD2
IXFN64N50PD3
IXYS REF: F_64N50P(9J)4-27-09
Figs.13-19 FRED Diode Curves
200
600
1000
0
400
800
120
140
160
180
200
220
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F/dt
t
s
K/W
0
200
400
600
800
1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
di
F/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
60
100
1000
0
1
2
3
4
5
01
23
4
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F/dt
-di
F/dt
A/
μs
A
V
μC
A/
μs
A/
μs
t
rr
ns
t
fr
Z
thJC
A/
μs
μs
2
Fig. 15. Peak reverse current I
RM
versus -di
F/dt
Fig. 14. Reverse recovery charge Q
r
versus -di
F/dt
Fig. 13. Forward current I
F versus VF
Q
r
I
RM
Fig. 16. Dynamic parameters Q
r, IRM
versus T
VJ
Fig. 17. Recovery time t
rr versus -diF/dt
Fig. 18. Peak forward voltage V
FR and
t
fr versus diF/dt
t
fr
V
FR
Fig. 19 Transient thermal resistance junction to case
Constants for Z
thJC calculation:
iR
thi (K/W)
t
i (s)
1
0.465
0.0052
2
0.179
0.0003
3
0.256
0.0397
T
VJ= 100°C
V
R = 600V
I
F= 60A
I
F= 30A
I
F=15A
T
VJ= 100°C
I
F
= 30A
I
F= 60A
I
F= 30A
I
F=15A
T
VJ= 100°C
V
R = 600V
T
VJ= 100°C
V
R = 600V
I
F= 60A
I
F= 30A
I
F= 15A
T
VJ= 25°C
T
VJ=100°C
T
VJ=150°C



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