LTC1154

1

1154fb

TYPICAL APPLICATION

FEATURES

APPLICATIONS

DESCRIPTION

High Side Micropower

MOSFET Driver

cost N-channel FETs for high side switching applications. An

internal charge pump boosts the gate drive voltage above

the positive rail, fully enhancing an N-channel MOS switch

with no external components. Micropower operation, with

8μA standby current and 85μA operating current, allows

use in virtually all systems with maximum efficiency.

Included on chip is programmable overcurrent sensing.

A time delay can be added to prevent false triggering on

high inrush current loads. An active high shutdown input

is also provided and interfaces directly to a standard PTC

thermistor for thermal shutdown. An open-drain output

is provided to report switch status to the μP. An active

low enable input is provided to control multiple switches

in banks.

The LTC1154 is available in both 8-pin DIP and 8-pin SOIC

packages.

Ultralow Voltage Drop High Side Switch with

Short-Circuit Protection

Standby Supply Current

IRLR024

0.036Ω*

LTC1154 • TA01

5V

LOAD

μP

5V

200k**

0.1μF**

2.7A MAX

51k

IN

EN

STATUS

GND

DS

G

SD

LTC1154

ALL COMPONENTS SHOWN ARE SURFACE MOUNT.

IMS026 INTERNATIONAL MANUFACTURING SERVICE, INC. (401) 683-9700

NOT REQUIRED IF LOAD IS RESISTIVE OR INDUCTIVE.

*

**

SUPPLY VOLTAGE (V)

0

0

5

15

20

25

50

35

515

LTC1153 • TA02

10

40

45

30

10

20

L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear

Technology Corporation. All other trademarks are the property of their respective owners.