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LTC4441 数据表(PDF) 3 Page - Linear Technology |
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LTC4441 数据表(HTML) 3 Page - Linear Technology |
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3 / 18 page ![]() LTC1154 3 1154fb ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VINL Input Low Voltage l 0.8 V IIN Input Current 0V < VIN < VS l ±1 μA CIN Input Capacitance 5pF VENH ENABLE Input High Voltage l 3.5 2.6 V VENL ENABLE Input Low Voltage l 1 0.6 V IEN ENABLE Input Current 0V < VIN < VS l ±1 μA VSDH Shutdown Input High Voltage l 2V VSDL Shutdown Input Low Voltage l 0.8 V ISD Shutdown Input Current 0V < VIN < VS l ±1 μA VSEN Drain Sense Threshold Voltage l 80 75 100 100 120 125 mV mV ISEN Drain Sense Input Current 0V < VSEN < VS l ±0.1 μA VGATE – VS Gate Voltage Above Supply VS = 5V VS = 6V VS = 12V l l l 6 7.5 15 7 8.3 18 9 15 25 V V V VSTAT Status Output Low Voltage ISTAT = 400μA l 0.05 0.4 V ISTAT Status Output Leakage Current VSTAT = 12V l 1μA tON Turn-ON Time VS = 5V, CGATE = 1000pF Time for VGATE > VS + 2V Time for VGATE > VS + 5V 30 100 110 450 300 1000 μs μs VS = 12V, CGATE = 1000pF Time for VGATE > VS + 5V Time for VGATE > VS + 10V 20 50 80 160 200 500 μs μs tOFF Turn-OFF Time VS = 5V, CGATE = 1000pF, Time for VGATE < 1V 10 36 60 μs VS = 12V, CGATE = 1000pF, Time for VGATE < 1V 10 28 60 μs tSC Short-Circuit Turn-OFF Time VS = 5V, CGATE = 1000pF, Time for VGATE < 1V 5 25 40 μs VS = 12V, CGATE = 1000pF, Time for VGATE < 1V 5 23 40 μs tSD Shutdown Turn-OFF Time VS = 5V, CGATE = 1000pF, Time for VGATE < 1V 17 40 μs VS = 12V, CGATE = 1000pF, Time for VGATE < 1V 13 35 μs The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = 4.5V to 18V, TA = 25°C, VEN = 0V, VSD = 0V unless otherwise noted. |
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