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HCS512 数据表(PDF) 20 Page - Microchip Technology |
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HCS512 数据表(HTML) 20 Page - Microchip Technology |
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20 / 34 page ![]() HCS512 DS40151E-page 20 © 2011 Microchip Technology Inc. TABLE 10-1: DC CHARACTERISTICS TABLE 10-2: AC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature Commercial (C): 0 ° C ≤TA ≤+70° C for commercial Industrial (I): -40 ° C ≤TA ≤+85° C for industrial Symbol Characteristic Min Typ(†) Max Units Conditions VDD Supply Voltage 4.0 — 6.0 V VPOR VDD start voltage to ensure RESET —VSS —V SVDD VDD rise rate to ensure RESET 0.05* — — V/ms IDD Supply Current — — 1.8 7.3 15 4.5 10 32 mA mA μA FOSC = 4 MHz, VDD = 5.5V (During EEPROM programming) In SLEEP mode VIL Input Low Voltage VSS —0.16 VDD V except MCLR = 0.2 VDD VIH Input High Voltage 0.48 VDD —VDD V except MCLR = 0.85 VDD VOL Output Low Voltage — — 0.6 V IOL = 8.5 mA, VDD = 4.5V VOH Output High Voltage VDD-0.7 — — V IOH = -3.0 mA, VDD = 4.5V † Data in “Typ” column is at 5.0V, 25 ° C unless otherwise stated. These parameters are for design guidance only and are not tested. * These parameters are characterized but not tested. Note: Negative current is defined as coming out of the pin. Symbol Characteristic Min Typ Max Units Conditions FOSC Oscillator frequency 2.7 4 6.21 MHz REXT = 10K, CEXT = 10 pF TE PWM elemental pulse width 65 — 1080 μs4.5V < VDD < 5.5V Oscillator components tolerance < 6%. 130 — 1080 μs3V < VDD < 6V Oscillator components tolerance <10% TOD Output delay 70 90 115 ms TA Output activation time 322 500 740 ms TRPT REPEAT activation time 32 50 74 ms TLRN LRNIN activation time 21 32 — ms TMCLR MCLR low time 150 — — ns TOV Time output valid — 150 222 ms * These parameters are characterized but not tested. |
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