S2N7002KT

N-Channel Enhancement MOSFET

Elektronische Bauelemente

09-Apr-2010 Rev. A

Page 1 of 4

SOT-523

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Low Gate Charge for Fast Switching.



ESD Protected Gate.

APPLICATIONS



Power Management Load Switch



Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

PACKAGE INFORMATION

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±10

V

Continuous Drain Current

154

mA

Pulsed Drain Current

tp≦10μs

618

mA

Continuous Source Current (Body Diode)

154

mA

Total Power Dissipation

1

300

mW

Operating Junction Temperature Range

150

°C

Operating Storage Temperature Range

-55~150

°C

Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

DEVICE MARKING

S2N7002KT = T6

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.50

1.70

K

0.30

0.50

B

0.75

0.95

M

---

10

o

C

0.60

0.80

N

---

10

o

D

0.23

0.33

S

1.50

1.70

G

0.50BSC

J

0.10

0.20