S2N7002KT datasheet(2/4 Pages) SECOS

2 / 4 page

S2N7002KT

N-Channel Enhancement MOSFET

Elektronische Bauelemente

09-Apr-2010 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

CHARACTERISTICS

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Off Characteristics

(Note2)

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 100μA

Zero Gate Voltage Drain Current

IDSS

1.0

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

±25

μA

VGS= ±10V, VDS=0V

On Characteristics

(Note2)

Gate Threshold Voltage

VGS(th)

0.5

1.0

1.5

VDS=VGS, ID=100μA

Static Drain-Source On Resistance

RDS(ON)

1.4

7.0

Ω

VGS=4.5V, ID =154mA

2.3

7.5

VGS=2.5V, ID =154mA

Forward transfer admittance

gfs

VDS=3V, ID =154mA

Dynamic Characteristics

Input Capacitance

Ciss

11.5

VDS=5V, VGS=0V, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

3.5

Switching Characteristics

Turn-On Delay Time

Td(ON)＊

VDS=5.0V, VGS=4.5V, ID=75mA,

RG=10Ω

Rise Time

Turn-Off Delay Time

Td(OFF)＊

Fall Time

Source-Drain Diode Characteristics

Input Capacitance

VSD

0.77

0.9

VGS=0V, IS=0.154mA

＊Pulse Test：pulse width ≦ 300μs, Duty cycle ≦ 2％

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