Elektronische Bauelemente

SSG4841P

P-Ch Enhancement Mode Power MOSFET

31-Dec-2010 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to

power loss and heat dissipation. Typical

applications are DC-DC converters and power

management In portable and battery-powered

products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

FEATURES



extends battery life.



Low thermal impedance copper leadframe

SOIC-8 saves board space.



Fast switching speed.



High performance trench technology.

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOP-8

2.5K

13’ inch

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

-9.0

A

Continuous Drain Current

1

-7.3

A

Pulsed Drain Current

2

±50

A

Continuous Source Current (Diode Conduction)

1

-2.1

A

3.1

W

Total Power Dissipation

1

2.6

W

Operating Junction & Storage Temperature Range

-55 ~ 150

°C

Thermal Resistance Ratings

t≦10 sec

50

°C / W

Thermal Resistance Junction-ambient (Max.)

1

Steady State

92

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

SOP-8

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

S

S

S

GD

D

D

D