Elektronische Bauelemente

SSG4841P

P-Ch Enhancement Mode Power MOSFET

31-Dec-2010 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

-1

-

-

V

Gate-Body Leakage Current

-

-

±100

nA

-

-

-1

μA

Zero Gate Voltage Drain Current

-

-

-5

μA

On-State Drain Current

1

-50

-

-

A

-

-

35

Drain-Source On-Resistance

1

-

-

45

mΩ

Forward Transconductance

1

-

31

-

S

Diode Forward Voltage

-

-0.7

-

V

Dynamic

2

Total Gate Charge

-

15.3

-

Gate-Source Charge

-

5.2

-

Gate-Drain(“Miller”) Charge

-

5.8

-

nC

Turn-On Delay Time

-

15

-

Rise Time

-

12

-

Turn-Off Delay Time

-

62

-

Fall Time

-

46

-

nS

Notes:

1.

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.