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SSG4542C 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4542C 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 6 page ![]() Elektronische Bauelemente SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL N-CH P-CH Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS 20 -20 V ID @ TA = 25°C 8.3 -7.6 A Continuous Drain Current 1 ID @ TA = 70°C 6.8 -6.3 A Pulsed Drain Current 2 IDM ±50 ±50 A Continuous Source Current (Diode Conduction) 1 IS 2.3 -2.1 A PD @ TA = 25°C 2.1 2.1 W Total Power Dissipation 1 PD @ TA = 70°C 1.3 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦ 10 sec 62.5 °C / W Maximum Junction-to-Ambient 1 Steady State RθJA 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D0° 8° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. SOP-8 |
类似零件编号 - SSG4542C |
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类似说明 - SSG4542C |
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