Elektronische Bauelemente

SSG4542C

N & P-Ch Enhancement Mode Power MOSFET

27-Dec-2010 Rev. B

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

N

1

1.5

3

Gate Threshold Voltage

P

-1

-1.4

-3

V

N

-

6

±100

Gate-Body Leakage Current

P

-

7

±100

nA

N

-

2nA

1

Zero Gate Voltage Drain Current

P

-

12nA

-1

μA

N

25

-

-

On-State Drain Current

1

P

-50

-

-

A

-

14

22

N

-

17

27

-

28

30

Drain-Source On-Resistance

1

P

-

35

40

mΩ

N

-

40

-

Forward Transconductance

1

P

-

31

-

S

Dynamic

2

N

-

13

30

Total Gate Charge

P

-

14

30

N

-

3.3

7

Gate-Source Charge

P

-

5.8

12

N

-

4.5

10

Gate-Drain Charge

P

-

12

30

nC

N-Channel

P-Channel

N

-

1317

3000

Input Capacitance

P

-

1583

4000

N

-

272

600

Output Capacitance

P

-

278

600

N

-

169

400

Reverse Transfer Capacitance

P

-

183

400

pF

N-Channel

P-Channel

N

-

20

40

Turn-On Delay Time

P

-

15

30

N

-

9

20

Rise Time

P

-

16

40

N

-

70

200

Turn-Off Delay Time

P

-

62

200

N

-

20

40

Fall Time

P

-

46

100

nS

N-Channel

P-Channel

Notes:

1.

Pulse test：PW ≦ 300

2.

Guaranteed by design, not subject to production testing.