© 2000 SEMTECH CORP.

652 MITCHELL ROAD NEWBURY PARK CA 91320

400mA SmartLDO

MOSFET

SC1532

January 3, 2000

2

NOTE:

(1) 1 inch square of 1/16” FR-4, double sided, 1 oz. minimum copper weight.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Maximum

Units

Input Supply Voltages

VIN1, VIN2

-0.5 to +7

V

Charge Pump Capacitor Pin Voltage

CP

-0.5 to +16

V

Output Current

I

O

400

mA

Operating Ambient Temperature Range

T

A

-5 to +70

°C

Operating Junction Temperature Range

T

J

-5 to +125

°C

Storage Temperature Range

T

STG

-65 to +150

°C

Lead Temperature (Soldering) 10 Sec

T

LEAD

300

°C

Thermal Impedance Junction to Ambient

(1)

θ

JA

65

°C/W

ESD Rating (Human Body Model)

ESD

4

kV

ELECTRICAL CHARACTERISTICS

Unless specified, T

Values in bold apply over full operating temperature range.

Parameter

Symbol

Test Conditions

MIN

TYP MAX Units

VIN1

Supply Voltage

VIN1

VIN2 = 0V

4.3

5.0

5.5

V

Quiescent Current

I

Q1

VIN1 = 5V, 0V

≤ VIN2 ≤ 3.6V, I

2.0

3.0

mA

4.0

Reverse Leakage From VIN2

(1)

I

VIN1

VIN1 = 0V, VIN2 = 3.6V, I

0

1

µA

VIN2

Supply Voltage

VIN2

3.0

3.3

3.6

V

Quiescent Current

I

Q2

VIN2 = 3.3V, 0V

≤ VIN1 ≤ 5.5V, I

650

1300

µA

2000

Reverse Leakage From VIN1

(1)

I

VIN2

VIN1 = 5.5V, VIN2 = 0V, I

0

1

µA

5V Detect

(1)(2)

Low Threshold Voltage

V

TH(LO)

VIN1 Falling, I

3.90

4.10

V

Hysteresis

V

HYST

I

60

80

150

mV

High Threshold Voltage

V

TH(HI)

VIN1 Rising, I

4.18

4.30

V