© 2000 SEMTECH CORP.

652 MITCHELL ROAD NEWBURY PARK CA 91320

400mA SmartLDO

MOSFET

SC1532

January 3, 2000

3

NOTES:

(1) Guaranteed by design.

(2) Recommended source impedance for 5V supply:

≤ 0.125Ω. This will ensure clean transitions between supplies

with no “chattering” (see Applications Information).

(3) Refer to block diagram.

ELECTRICAL CHARACTERISTICS (Cont.)

Unless specified, T

Values in bold apply over full operating temperature range.

Parameter

Symbol

Test Conditions

MIN

TYP MAX Units

VO

LDO Voltage Accuracy

VO

I

-1

+1

%

4.3V

≤ VIN1 ≤ 5.5V, 0mA ≤ I

(1)

-2

+2

3.90V

≤ VIN1 ≤ 4.3V, VIN2 = 3.3V,

0mA

≤ I

(1)

3.000

V

VIN2 Pass Device On Resis-

R

DS(ON)

VIN1 < 3.9V, 0mA

≤ I

360

500

m

Ω

tance (Aux. NMOS)

(1)(3)

Line Regulation

REG

(LINE)

VIN1 = 4.3V to 5.5V

0.3

0.6

%

0.7

Load Regulation

REG

(LOAD)

I

0.3

0.6

%

0.7

Current Limit (LDO)

Output Current

I

LIM

VIN1 = 5V, VIN2 = 0V, VO = 0V

600

975

1200

mA

1400

Over Temperature Protection

High Trip Level

T

HI

VIN1=5V

175

ºC

Hysteresis

T

HYS

VIN1=5V

10

ºC