© Semiconductor Components Industries, LLC, 2009

August, 2009 − Rev. 5

1

Publication Order Number:

MBD301/D

MBD301G, MMBD301LT1G

Silicon Hot-Carrier Diodes

SCHOTTKY Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

Compliant

MAXIMUM RATINGS

MBD301 MMBD301LT1

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Total Device Dissipation

Derate above 25°C

280

2.8

200

2.0

mW

mW/°C

Operating Junction

Temperature Range

−55 to +125

°C

Storage Temperature Range

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

MBD

301

AYWWG

G

TO−92

(TO−226AC)

CASE 182

STYLE 1

4T M G

G

MBD301

SOT−23

(TO−236)

CASE 318

STYLE 8

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

1

2

3

1

2

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

1

MMBD301LT1

M

= Date Code

G

= Pb−Free Package

MARKING

DIAGRAM

(Note: Microdot may be in either location)

(Note: Microdot may be in either location)