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MBD301G 数据表(PDF) 2 Page - ON Semiconductor |
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MBD301G 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBD301G, MMBD301LT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT − 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR − 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF − 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF − 0.52 0.6 Vdc ORDERING INFORMATION Device Package Shipping† MBD301G TO−92 (Pb−Free) 5000 Units / Bulk MMBD301LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBD301LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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