AS8221-ASSP datasheet(12/41 Pages) AMSCO

12 / 41 page

AS8221

Datasheet - Electrical Character i s t ics

www.austriamicrosystems.com/flexray/AS8221

Revision 1.4

12 - 41

1. EN, STBN, ERRN, TxD, RxD, TxEN, BGE, RxEN, LWAKE, INH1, INH2: open

2. Test condition: (VBP + VBM) / 2 = 2,5V) ± 5%

3. For test signal (see Figure 17)

4. Guaranteed at specified bit time tBIT

tEN_DEB_LP

EN de-bouncing time low-power

modes

0.1

µs

tEN_DEB_NLP

EN de-bouncing time non-low-

power modes

0.1

µs

VERRNOH

ERRN high level output voltage

IERRN = -4mA, VIO = 5V

0.8 * VIO 0.9 * VIO 1.0 * VIO

VERRNOL

ERRN low level output voltage

IERRN = 4mA, VIO = 5V

0.1 * VIO 0.2 * VIO

Bus Guardian Interface

VBGEIH

Threshold for detecting BGE as

on logical high

0.48 *

VIO

0.7 * VIO

VBGEIL

Threshold for detecting BGE as

on logical low

0.3 * VIO

0.48 *

VIO

IBGEIH

BGE high level input current

100

µA

IBGEIL

BGE low level input current

-5

µA

VRxENOH

RxEN high level output voltage

IRxEN = -4mA, VIO = 5V

0.8 * VIO 0.9 * VIO 1.0 * VIO

VRxENOL

RxEN low level output voltage

IRxEN = 4mA, VIO = 5V

0.1 * VIO 0.2 * VIO

Read Out Interface

tRO_EN_ERRN

Propagation delay falling edge

EN to ERRN

24.5

µs

tRO_EN_TIMEOUT

error-read-out timeout

100

µs

Table 3. Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

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