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IPD50R520CP 数据表(PDF) 1 Page - Infineon Technologies AG |
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IPD50R520CP 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() Type IPD50R520CP CoolMOS TM Power Transistor Package • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC 1) for target applications CoolMOS CP is designed for: • Hard- & Softswitching SMPS topologies • DCM PFC for Lamp ballast • PWM for Lamp Ballast, PDP and LCD TV Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=2.5 A, V DD=50 V 166 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=2.5 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0...400 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Value 7.1 4.5 15 ±30 66 -55 ... 150 0.25 2.5 50 ±20 V DS @Tjmax 550 V R DS(on),max 0.520 Ω Q g,typ 13 nC Product Summary Type Package Marking IPD50R520CP PG-TO252 5R520P PG-TO252 Rev. 2.1 page 1 2008-04-10 |
类似零件编号 - IPD50R520CP_08 |
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类似说明 - IPD50R520CP_08 |
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