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Data Sheet

MP6M11



Electrical characteristics (Ta = 25

C)

<Tr1(Nch)>

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

-

-

±10

30

-

-

V

Zero gate voltage drain current

--

1

Gate threshold voltage

1.0

-

2.5

V

-70

98

-

90

126

-

100

140

Forward transfer admittance

1.5

-

-

S

Input capacitance

-

85

-

pF

Output capacitance

-

40

-

pF

Reverse transfer capacitance

-

20

-

pF

f=1MHz

Turn-on delay time

-4

-

ns

Rise time

-8

-

ns

Turn-off delay time

-

18

-

ns

Fall time

-3

-

ns

Total gate charge

-

1.9

-

Gate-source charge

-

0.8

-

Gate-drain charge

-

0.4

-

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

-

-

1.2

V

*Pulsed

Parameter

Conditions

Conditions

Parameter

Static drain-source on-state

resistance

m



*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

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2011.03 - Rev.A