Data Sheet

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4V Drive Nch + Pch MOSFET

MP6M11



Structure

Silicon N-channel MOSFET/

Silicon P-channel MOSFET



Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (MPT6).



Application

Switching



Packaging specifications

Package

Taping

Code

TCR

Basic ordering unit (pieces)

1000

MP6M11





Absolute maximum ratings (Ta = 25

C)

Tr1 : N-ch Tr2 : P-ch

Drain-source voltage

30

30

V

Gate-source voltage

±20

±20

V

Continuous

3.5

3.5

A

Pulsed

12

12

A

Continuous

1.6

1.6

A

Pulsed

12

12

A

W / TOTAL

W / ELEMENT

Channel temperature

Tch

C

Range of storage temperature

Tstg

C

*1 Pw

10s, Duty cycle1%

*2 Mounted on a ceramic board.

2.0

55 to 150

Unit

Limits

1.4

150

Total power dissipation

Symbol

Type

Source current

(Body Diode)

Drain current

Parameter

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

MPT6

(Duel)

(1)

(2)

(3)

(6)

(5)

(4)

*1

*1



Dimensions (Unit : mm)



Inner circuit

∗2

∗2

∗1

∗1

(1)

(2)

(3)

(6)

(5)

(4)

*2

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2011.03 - Rev.A