LH28F008SC datasheet(21/38 Pages) SHARP

21 / 38 page

8M (1M × 8) Flash Memory

LH28F008SC

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

TEST CONDITION

Operating Temperature

+70

°C

Ambient Temperature

CC Supply Voltage (3.3 V ± 0.3 V)

3.0

3.6

CC Supply Voltage (5 V ± 5%)

4.75

5.25

CC Supply Voltage (5 V ± 10%)

4.50

5.50

Operating Conditions

Temperature and VCC Operating Conditions

NOTICE: This datasheet contains information on

products in the design phase of development. Do not

finalize a design with this information. Revised informa-

tion will be published when the product is available.

Veryify with your local SHARP sales office that you have

the latest datasheet before finalizing a design.

*WARNING: Stressing the device beyond the “Abso-

lute Maximum Ratings” may cause permanent damage.

These are stress ratings only. Operation beyond the

“Operating Conditions” is not recommended and ex-

tended exposure beyond the“Operating Conditions” may

affect device reliability.

NOTES:

1. Operating temperature is for commercial product defined by

this specification.

2. All specified voltages are with respect to GND. Minimum DC

voltage is -0.5 V on input/output pins and -0.2 V on VCC and VPP

pins. During transitions, this level may undershoot to -2.0 V for

periods < 20 ns. Maximum DC voltage on input/output pins and

VCC is VCC + 5.0 V which, during transitions, may overshoot to

VCC + 2.0 V for periods < 20 ns.

3. Maximum DC voltage on VPP and RP » may overshoot to

+14.0 V for periods < 20 ns.

4. Output shorted for no more than on second. No more than one

output shorted at a time.

Power Dissipation

When designing portable systems, designers must

consider battery power consumption not only during

device operation, but also for data retention during sys-

tem idle time. Flash memory’s nonvolatility increases

usable battery life because data is retained when sys-

tem power is removed.

In addition, deep power-down mode ensures

extremely low power consumption even when system

power is applied. For example, portable computing prod-

ucts and other power sensitive applications that use an

array of devices for solid-state storage can consume

negligible power by lowering RP

» to VIL standby or sleep

modes. If access is again needed, the devices can be

read following the tPHQV and tPHWL wake-up cycles re-

quired after RP

» is first raised to VIH. See AC Character-

istics - Read Only and Write Operations and Figures 16

and 17 for more information.

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings*

Commercial Operating Temperature

during Read, Block Erase, Byte Write,

and Lock-Bit Configuration ............... 0°C to +70°C1

Temperature under Bias ...................... -10°C to +80°C

StorageTemperature: ......................... 65°C to +125°C

Voltage On Any Pin

(except VCC, VPP and RP »)................ -2 V to +7.0 V

VCC Supply Voltage ........................... -2.0 V to +7.0 V

VPP Update Voltage during Block Erase,

Byte Write,and Lock-Bit

Configuration ............................ -2.0 V to +14.0 V2, 3

» Voltage with Respect to GND

during Lock-Bit Configuration

Operations ............................... -2.0 V to +14.0 V2, 3

Output Short Circuit Current .......................... 100 mA4

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