SILICON EPITAXIAL

PLANAR NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

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Document Number 9116

Issue 2

Page 1 of 4

MG6330, MG6330-R

A = 25°C unless otherwise stated)

MG6330

MG6330-R

VCBO

Collector – Base Voltage

230V

260V

VCEO

Collector – Emitter Voltage

230V

260V

VEBO

Emitter – Base Voltage

5V

IC

Continuous Collector Current

15A

IB

Base Current

4A

PD

Total Power Dissipation at

TA = 25°C

200W

TJ

Maximum Junction Temperature

150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.63

°C/W