MG6330-R datasheet(2/4 Pages) SEME-LAB

2 / 4 page

SILICON EPITAXIAL

PNP TRANSISTOR

MG6330, MG6330-R

Semelab

Semelab Limited

Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 9116

Issue 2

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICBO

Collector-Cut-Off Current

MG6330

VCB = 230V

100

µA

MG6330-R

VCB = 260V

IEBO

Emitter-Cut-Off-Current

VEB = 5V

100

µA

V(BR)CEO

Collector-Base Breakdown

Voltage

IC = 25mA

MG6330

230

MG6330-R

260

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 0.5A

2.0

hFE

Forward-current transfer

ratio

IC = 5A

VCE = 4V

140

DYNAMIC CHARACTERISTICS

Transition Frequency

IE = -2A

VCE = 12V

MHz

COB

Output Capacitance

VCB = 10V

f = 1.0MHz

250

Notes

Pulse Width ≤ 300us, δ ≤ 2%t

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