HVLED805 datasheet(6/29 Pages) STMICROELECTRONICS

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Electrical characteristics

HVLED805

6/29

Doc ID 18077 Rev 1

VDMGH

Upper clamp voltage

IDMG = 1 mA

3.0

3.3

3.6

VDMGL

Lower clamp voltage

IDMG = - 1 mA

-90

-60

-30

VDMGA

Arming voltage

positive-going edge

100

110

120

VDMGT

Triggering voltage

negative-going edge

IDMGON

Min. source current during MOSFET ON-time

-25

-50

-75

µA

TBLANK

Trigger blanking time after MOSFET’s turn-off

VCOMP ≥ 1.3V

µs

VCOMP = 0.9V

Line feedforward

RFF

Equivalent feedforward resistor

IDMG = 1mA

Transconductance error amplifier

VREF

Voltage reference

Tj = 25 °C (1)

2.45

2.51

2.57

Tj = -25 to 125°C and

Vcc=12V to 23V (1)

2.4

2.6

Transconductance

ΔI

COMP = ±10 µA

VCOMP = 1.65 V

1.3

2.2

3.2

Voltage gain

Open loop

Gain-bandwidth product

500

kHz

ICOMP

Source current

VDMG = 2.3V, VCOMP = 1.65V

100

µA

Sink current

VDMG = 2.7V, VCOMP = 1.65V

400

750

µA

VCOMPH Upper COMP voltage

VDMG = 2.3V

2.7

VCOMPL Lower COMP voltage

VDMG = 2.7V

0.7

VCOMPBM Burst-mode threshold

Hys

Burst-mode hysteresis

Current reference

VILEDx

Maximum value

VCOMP = VCOMPL

(1)

1.5

1.6

1.7

VCLED

Current reference voltage

0.192

0.2

0.208

Current sense

tLEB

Leading-edge blanking

200

250

300

td(H-L)

Delay-to-output

300

VCSx

Max. clamp value

(1) dVcs/dt = 200 mV/µs

0.7

0.75

0.8

VCSdis

Hiccup-mode OCP level

(1)

0.92

1.08

Parameters tracking each other

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ. Max. Unit

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