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HVLED805 数据表(PDF) 17 Page - STMicroelectronics |
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HVLED805 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 29 page ![]() HVLED805 Application information Doc ID 18077 Rev 1 17/29 Due to the parasitic wires resistance, the auxiliary voltage is representative of the output just when the secondary current becomes zero. For this purpose, the signal on DMG pin is sampled-and-held at the end of transformer’s demagnetization to get an accurate image of the output voltage and it is compared with the error amplifier internal reference. During the MOSFET’s OFF-time the leakage inductance resonates with the drain capacitance and a damped oscillation is superimposed on the reflected voltage. The S/H logic is able to discriminate such oscillations from the real transformer’s demagnetization. When the DMG logic detects the transformer’s demagnetization, the sampling process stops, the information is frozen and compared with the error amplifier internal reference. The internal error amplifier is a transconductance type and delivers an output current proportional to the voltage unbalance of the two outputs: the output generates the control voltage that is compared with the voltage across the sense resistor, thus modulating the cycle-by-cycle peak drain current. The COMP pin is used for the frequency compensation: usually, an RC network, which stabilizes the overall voltage control loop, is connected between this pin and ground. The output voltage can be defined according the formula: Equation 1 Where nSEC and nAUX are the secondary and auxiliary turn’s number respectively. The RDMG value can be defined depending on the application parameters (see “Section 5.6: Voltage feedforward block on page 20” section). Figure 14. Voltage control principle: internal schematic 2.5V Rdmg From Rsense Aux EA R To PWM Logic S/H Rfb DEMAG LOGIC CV C COMP DMG DMG REF OUT SEC AUX REF FB R V V n n V R ⋅ − ⋅ = |
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