STPS10M80C

Characteristics

Doc ID 018734 Rev 1

3/11

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

-

4

20

µA

-

3.5

15

mA

(2)

Forward voltage drop

-

0.540

0.580

V

-

0.465

0.495

-

0.640

0.705

-

0.550

0.590

-

0.775

0.850

-

0.635

0.705

1.

2.

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

0

1

2

3

4

5

0

1

2

3456

7

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

T

δ = t / T

p

t

p

I

(A)

F(AV)

P

(W)

F(AV)

0

1

2

3

4

5

6

0

25

50

75

100

125

150

175

I

(A)

F(AV)

Rth(j-a) = Rth(j-c)

TO-220AB / I PAK / D PAK

22

TO-220FPAB

T

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

P(tp)

P

(1µs)

ARM

ARM

t (µs)

p

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

P(T )

P

(25 °C)

ARM

j

ARM

T (°C)

j